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| RFH10N45, RFH10N50 Semiconductor Data Sheet October 1998 File Number 1629.2 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs Features * 10A, 450V and 500V [ /Title These are N-Channel enhancement mode silicon gate * rDS(ON) = 0.600 (RFH10 power field effect transistors designed for applications such * Related Literature as switching regulators, switching converters, motor drivers, N45, - TB334 "Guidelines for Soldering Surface Mount relay drivers, and drivers for high power bipolar switching RFH10N Components to PC Boards" transistors requiring high speed and low gate drive power. 50) These types can be operated directly from integrated circuits. /Subject Symbol Formerly developmental type TA17435. 10A, D 50V Ordering Information nd PART NUMBER PACKAGE BRAND G 00V, RFH10N45 TO-218AC RFH10N45 .600 S RFH10N50 TO-218AC RFH10N50 hm, -Chan- NOTE: When ordering, include the entire part number. el ower Packaging OSJEDEC TO-218AC ETs) SOURCE /Author DRAIN ) GATE /Keyords Harris emionducor, DRAIN (FLANGE) -Chanel ower OSETs, O18AC) /Creator ) /DOCIN O pdfark 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 RFH10N45, RFH10N50S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFH10N45 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1M) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 450 450 10 20 20 150 1.2 -55 to 150 300 260 RFH10N50 500 500 10 20 20 150 1.2 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 450 500 VGS(TH) IDSS VGS = VDS, ID = 250A (Figure 8) VDS = Rated BVDSS VDS = 0.8 x Rated BVDSS, TC = 125oC 2 VGS = 0V, VDS = 25V f = 1MHz (Figure 9) 26 50 525 105 4 1 25 100 6.0 0.600 60 100 900 180 3000 600 200 0.83 V V V A A nA V ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFH10N45 RFH10N50 Gate to Threshold Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Voltage (Note 2) Drain to Source On Resistance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance, Junction to Case IGSS VDS(ON) rDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 20V, VDS = 0V ID = 10A, VGS = 10V ID = 10A, VGS = 10V (Figures 6, 7) ID 5A, VDS = 250V, RG = 50, RL = 50, VGS = 10V (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr ISD = 10A ISD = 10A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP 950 MAX 1.4 UNITS V ns 2 RFH10N45, RFH10N50 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 0.8 12 11 10 9 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 0.6 0.4 0.2 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 OPERATION IN THIS AREA LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) ID MAX CONTINUOUS TC = 25oC TJ = MAX RATED ID, DRAIN CURRENT (A) 24 20 PULSE DURATION = 80s DUTY CYCLE 2% VGS = 5V VGS = 10V, 8V VGS = 6V VGS = 4.5V 10 16 12 DC VGS = 4V 8 VGS = 3.5V VGS = 3V 1 VDS(MAX) = 450V RFH10N45 VDS(MAX) = 500V RFH10N50 4 0.1 1 10 100 VDS, DRAIN TO SOURCE (V) 1000 0 2 6 4 8 10 12 VDS, DRAIN TO SOURCE VOLTAGE (V) 14 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 24 20 16 12 8 125oC 4 0 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 7 -40oC 25oC VDS = 25V PULSE DURATION = 80s rDS(ON), DRAIN TO SOURCE ON 1.2 VGS = 10V PULSE DURATION = 80s 1.0 0.8 125oC 0.6 RESISTANCE () 0.4 0.2 25oC -40oC 0 0 4 8 12 16 20 ID, DRAIN CURRENT (A) 24 28 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 3 RFH10N45, RFH10N50 Typical Performance Curves 3.0 ID = 10A NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.5 2.0 1.5 1.0 0.5 0.7 -50 0 50 100 150 0.6 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 VGS = 10V THRESHOLD VOLTAGE NORMALIZED GATE 1.3 1.2 1.1 1.0 0.9 0.8 (Continued) 1.4 ID = 250A TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS VDS, DRAIN TO SOURCE VOLTAGE (V) 4000 FIGURE 8. NORMALIZED GATE TO THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 500 10 VGS, GATE TO SOURCE VOLTAGE (V) 8 375 VDD = BVDSS 250 GATE SOURCE VOLTAGE RL = 50 IG(REF) = 2.1mA VGS = 10V VDD = BVDSS 6 C, CAPACITANCE (PF) 3000 2000 CISS 4 1000 COSS CRSS 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 125 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 2 0 I (REF) 20 G IG (ACT) t, TIME (s) I (REF) 80 G IG (ACT) 0 NOTE: Refer to Harris Applications Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 4 |
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